Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy
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Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy. / Kremmer, S.; Peissl, S.; Teichert, C. et al.
in: Materials science and engineering B (Solid-state materials for advanced technology), Jahrgang 102, 2003, S. 88-93.
in: Materials science and engineering B (Solid-state materials for advanced technology), Jahrgang 102, 2003, S. 88-93.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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Bibtex - Download
@article{17c4c0cd82fd48479631f76224d6cf6d,
title = "Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy",
author = "S. Kremmer and S. Peissl and C. Teichert and Friedemar Kuchar and C. Hofer",
year = "2003",
language = "English",
volume = "102",
pages = "88--93",
journal = "Materials science and engineering B (Solid-state materials for advanced technology)",
issn = "0921-5107",
publisher = "Elsevier",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy
AU - Kremmer, S.
AU - Peissl, S.
AU - Teichert, C.
AU - Kuchar, Friedemar
AU - Hofer, C.
PY - 2003
Y1 - 2003
M3 - Article
VL - 102
SP - 88
EP - 93
JO - Materials science and engineering B (Solid-state materials for advanced technology)
JF - Materials science and engineering B (Solid-state materials for advanced technology)
SN - 0921-5107
ER -
