Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy

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Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy. / Kremmer, S.; Peissl, S.; Teichert, C. et al.
In: Materials science and engineering B (Solid-state materials for advanced technology), Vol. 102, 2003, p. 88-93.

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@article{17c4c0cd82fd48479631f76224d6cf6d,
title = "Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy",
author = "S. Kremmer and S. Peissl and C. Teichert and Friedemar Kuchar and C. Hofer",
year = "2003",
language = "English",
volume = "102",
pages = "88--93",
journal = "Materials science and engineering B (Solid-state materials for advanced technology)",
issn = "0921-5107",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy

AU - Kremmer, S.

AU - Peissl, S.

AU - Teichert, C.

AU - Kuchar, Friedemar

AU - Hofer, C.

PY - 2003

Y1 - 2003

M3 - Article

VL - 102

SP - 88

EP - 93

JO - Materials science and engineering B (Solid-state materials for advanced technology)

JF - Materials science and engineering B (Solid-state materials for advanced technology)

SN - 0921-5107

ER -