Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy
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Translated title of the contribution | Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy |
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Original language | English |
Pages (from-to) | 88-93 |
Journal | Materials science and engineering B (Solid-state materials for advanced technology) |
Volume | 102 |
Publication status | Published - 2003 |