Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy

Kremmer, S., Peissl, S., Teichert, C., Kuchar, F. & Hofer, C., 2003, in: Materials science and engineering B (Solid-state materials for advanced technology). 102, S. 88-93

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Molecular alignments in sexiphenyl thin films epitaxially grown on muscovite

Plank, H., Resel, R., Sitter, H., Andreev, A., Sariciftci, N. S., Hlawacek, G., Teichert, C., Thierry, A. & Lotz, B., 2003, in: Thin solid films. 443, S. 108-114

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Thermal emissivity of carbon coated p-doped silicon stencil masks for ion projection lithography

Braun, D., Gajic, R., Kuchar, F., Korntner, R., Haugeneder, E., Löschner, H., Butschke, J., Letzkus, F. & Springer, R., 2003, in: Journal of vacuum science & technology / B (JVST). 21, S. 123-126

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A drastic change of the effective g-value in nanostructure system: Zeeman attenuator

Aoki, N., Lin, L., Oonishi, D., Kida, M., Iwase, Y., Ishibashi, K., Aoyagi, Y., Bird, J. P., Ferry, D. K., Oswald, J. & Ochiai, Y., 2002, in: Physica B: Condensed Matter. 314, 1, S. 235-238

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Characterization of silicon gate oxides by conducting atomic-force microscopy

Kremmer, S., Teichert, C., Pischler, E., Gold, H., Kuchar, F. & Schatzmayr, M., 2002, in: Surface and interface analysis. 33, S. 168-172

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Dynamical scaling of the quantum Hall plateau transition

Hohls, F., Zeitler, U., Haug, R., Meisels, R., Dybko, K. & Kuchar, F., 2002, in: Physical review letters. 89, S. 2768011-2768014

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