Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si
Research output: Contribution to journal › Article › Research › peer-review
Standard
In: Materials Science in Semiconductor Processing, Vol. 181, 108579, 10.2024.
Research output: Contribution to journal › Article › Research › peer-review
Harvard
APA
Vancouver
Author
Bibtex - Download
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si
AU - Ziegelwanger, T.
AU - Reisinger, M.
AU - Matoy, K.
AU - Medjahed, A. A.
AU - Zalesak, J.
AU - Gruber, Manuel
AU - Meindlhumer, M.
AU - Keckes, J.
N1 - Publisher Copyright: © 2024
PY - 2024/10
Y1 - 2024/10
KW - Die bending strength
KW - Local residual stresses
KW - Nanosecond laser dicing
KW - Ultra-thin Si dies
KW - X-ray nanodiffraction
UR - http://www.scopus.com/inward/record.url?scp=85195318851&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2024.108579
DO - 10.1016/j.mssp.2024.108579
M3 - Article
AN - SCOPUS:85195318851
VL - 181
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
M1 - 108579
ER -