Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)

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Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si. / Ziegelwanger, T.; Reisinger, M.; Matoy, K. et al.
in: Materials Science in Semiconductor Processing, Jahrgang 181, 108579, 10.2024.

Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)

Harvard

Ziegelwanger, T, Reisinger, M, Matoy, K, Medjahed, AA, Zalesak, J, Gruber, M, Meindlhumer, M & Keckes, J 2024, 'Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si', Materials Science in Semiconductor Processing, Jg. 181, 108579. https://doi.org/10.1016/j.mssp.2024.108579

APA

Ziegelwanger, T., Reisinger, M., Matoy, K., Medjahed, A. A., Zalesak, J., Gruber, M., Meindlhumer, M., & Keckes, J. (2024). Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si. Materials Science in Semiconductor Processing, 181, Artikel 108579. https://doi.org/10.1016/j.mssp.2024.108579

Vancouver

Ziegelwanger T, Reisinger M, Matoy K, Medjahed AA, Zalesak J, Gruber M et al. Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si. Materials Science in Semiconductor Processing. 2024 Okt;181:108579. doi: 10.1016/j.mssp.2024.108579

Author

Ziegelwanger, T. ; Reisinger, M. ; Matoy, K. et al. / Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si. in: Materials Science in Semiconductor Processing. 2024 ; Jahrgang 181.

Bibtex - Download

@article{d7b66c7449ee48529b4b343c6d296372,
title = "Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si",
keywords = "Die bending strength, Local residual stresses, Nanosecond laser dicing, Ultra-thin Si dies, X-ray nanodiffraction",
author = "T. Ziegelwanger and M. Reisinger and K. Matoy and Medjahed, {A. A.} and J. Zalesak and Manuel Gruber and M. Meindlhumer and J. Keckes",
note = "Publisher Copyright: {\textcopyright} 2024",
year = "2024",
month = oct,
doi = "10.1016/j.mssp.2024.108579",
language = "English",
volume = "181",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Backside metallization affects residual stress and bending strength of the recast layer in laser-diced Si

AU - Ziegelwanger, T.

AU - Reisinger, M.

AU - Matoy, K.

AU - Medjahed, A. A.

AU - Zalesak, J.

AU - Gruber, Manuel

AU - Meindlhumer, M.

AU - Keckes, J.

N1 - Publisher Copyright: © 2024

PY - 2024/10

Y1 - 2024/10

KW - Die bending strength

KW - Local residual stresses

KW - Nanosecond laser dicing

KW - Ultra-thin Si dies

KW - X-ray nanodiffraction

UR - http://www.scopus.com/inward/record.url?scp=85195318851&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2024.108579

DO - 10.1016/j.mssp.2024.108579

M3 - Article

AN - SCOPUS:85195318851

VL - 181

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

M1 - 108579

ER -

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