Hydrogen content in amorphous SiN
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Hydrogen content in amorphous SiN. / Jonak, I; Kuchar, Friedemar.
in: European semiconductor, Jahrgang 22, 2000, S. 49-52.
in: European semiconductor, Jahrgang 22, 2000, S. 49-52.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Harvard
Jonak, I & Kuchar, F 2000, 'Hydrogen content in amorphous SiN', European semiconductor, Jg. 22, S. 49-52.
APA
Jonak, I., & Kuchar, F. (2000). Hydrogen content in amorphous SiN. European semiconductor, 22, 49-52.
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Bibtex - Download
@article{5b3706458b564242ab502e89001f44cc,
title = "Hydrogen content in amorphous SiN",
author = "I Jonak and Friedemar Kuchar",
year = "2000",
language = "English",
volume = "22",
pages = "49--52",
journal = "European semiconductor",
issn = "0957-5685",
publisher = "Angel Business Communications Ltd.",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Hydrogen content in amorphous SiN
AU - Jonak, I
AU - Kuchar, Friedemar
PY - 2000
Y1 - 2000
M3 - Article
VL - 22
SP - 49
EP - 52
JO - European semiconductor
JF - European semiconductor
SN - 0957-5685
ER -