Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction
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in: Materials and Design, Jahrgang 106, 2016, S. 476-481.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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TY - JOUR
T1 - Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction
AU - Reisinger, Michael
AU - Zalesak, Jakub
AU - Daniel, Rostislav
AU - Tomberger, M.
AU - Weiss, J.K.
AU - Darbal, A.D.
AU - Petrenec, M.
AU - Zechner, J.
AU - Daumiller, I.
AU - Ecker, Werner
AU - Sartory, Bernhard
AU - Keckes, Jozef
PY - 2016
Y1 - 2016
U2 - http://dx.doi.org/10.1016/j.matdes.2016.06.001
DO - http://dx.doi.org/10.1016/j.matdes.2016.06.001
M3 - Article
VL - 106
SP - 476
EP - 481
JO - Materials and Design
JF - Materials and Design
SN - 1873-4197
ER -
