Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

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@article{d55b5602b6df47ccaae8d1e3fcf96822,
title = "Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction",
author = "Michael Reisinger and Jakub Zalesak and Rostislav Daniel and M. Tomberger and J.K. Weiss and A.D. Darbal and M. Petrenec and J. Zechner and I. Daumiller and Werner Ecker and Bernhard Sartory and Jozef Keckes",
year = "2016",
doi = "http://dx.doi.org/10.1016/j.matdes.2016.06.001",
language = "English",
volume = "106",
pages = "476--481",
journal = "Materials and Design",
issn = "1873-4197 ",
publisher = "Elsevier",

}

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TY - JOUR

T1 - Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

AU - Reisinger, Michael

AU - Zalesak, Jakub

AU - Daniel, Rostislav

AU - Tomberger, M.

AU - Weiss, J.K.

AU - Darbal, A.D.

AU - Petrenec, M.

AU - Zechner, J.

AU - Daumiller, I.

AU - Ecker, Werner

AU - Sartory, Bernhard

AU - Keckes, Jozef

PY - 2016

Y1 - 2016

U2 - http://dx.doi.org/10.1016/j.matdes.2016.06.001

DO - http://dx.doi.org/10.1016/j.matdes.2016.06.001

M3 - Article

VL - 106

SP - 476

EP - 481

JO - Materials and Design

JF - Materials and Design

SN - 1873-4197

ER -