Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

Research output: Contribution to journalArticleResearchpeer-review

Authors

  • M. Tomberger
  • J.K. Weiss
  • A.D. Darbal
  • M. Petrenec
  • J. Zechner
  • I. Daumiller
  • Bernhard Sartory

External Organisational units

  • Infineon Technologies AG Austria
  • AppFive LLC, Tempe, AZ, USA
  • TESCAN Brno s.r.o.
  • Materials Center Leoben Forschungs GmbH

Details

Original languageEnglish
Pages (from-to)476-481
Number of pages6
JournalMaterials and Design
Volume106
DOIs
Publication statusPublished - 2016