Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction
Research output: Contribution to journal › Article › Research › peer-review
Authors
Organisational units
External Organisational units
- Infineon Technologies AG Austria
- AppFive LLC, Tempe, AZ, USA
- TESCAN Brno s.r.o.
- Materials Center Leoben Forschungs GmbH
Details
| Original language | English |
|---|---|
| Pages (from-to) | 476-481 |
| Number of pages | 6 |
| Journal | Materials and Design |
| Volume | 106 |
| DOIs | |
| Publication status | Published - 2016 |
