Cross-sectional stress distribution in AlxGa1-xN heterostructure on Si(111) substrate characterized by ion beam layer removal method and precession electron diffraction

Research output: Contribution to journal › Article › Research › peer-review

Authors

M. Tomberger
J.K. Weiss
A.D. Darbal
M. Petrenec
J. Zechner
I. Daumiller
Bernhard Sartory

Organisational units

External Organisational units

Infineon Technologies AG Austria
AppFive LLC, Tempe, AZ, USA
TESCAN Brno s.r.o.
Materials Center Leoben Forschungs GmbH

Details

Original language	English
Pages (from-to)	476-481
Number of pages	6
Journal	Materials and Design
Volume	106
DOIs	https://doi.org/10.1016/j.matdes.2016.06.001
Publication status	Published - 2016

University of Leoben research gateway