Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE

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Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE. / Werner, J.; Oehme, M.; Lyutovich, K. et al.
In: Surface Science, Vol. 601, 2007, p. 2774-2777.

Research output: Contribution to journalArticleResearchpeer-review

Vancouver

Werner J, Oehme M, Lyutovich K, Kasper E, Hofer C, Teichert C. Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE. Surface Science. 2007;601:2774-2777. doi: 10.1016/j.susc.2006.12.084

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Werner, J. ; Oehme, M. ; Lyutovich, K. et al. / Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE. In: Surface Science. 2007 ; Vol. 601. pp. 2774-2777.

Bibtex - Download

@article{097e0deef3954e8daf8afeebae14bc09,
title = "Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE",
author = "J. Werner and M. Oehme and K. Lyutovich and Erich Kasper and Christian Hofer and Christian Teichert",
year = "2007",
doi = "10.1016/j.susc.2006.12.084",
language = "English",
volume = "601",
pages = "2774--2777",
journal = "Surface Science",
issn = "0043-2539",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE

AU - Werner, J.

AU - Oehme, M.

AU - Lyutovich, K.

AU - Kasper, Erich

AU - Hofer, Christian

AU - Teichert, Christian

PY - 2007

Y1 - 2007

U2 - 10.1016/j.susc.2006.12.084

DO - 10.1016/j.susc.2006.12.084

M3 - Article

VL - 601

SP - 2774

EP - 2777

JO - Surface Science

JF - Surface Science

SN - 0043-2539

ER -