Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE
Research output: Contribution to journal › Article › Research › peer-review
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| Translated title of the contribution | Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE |
|---|---|
| Original language | English |
| Pages (from-to) | 2774-2777 |
| Journal | Surface Science |
| Volume | 601 |
| DOIs | |
| Publication status | Published - 2007 |
