Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy

Research output: Contribution to conferencePosterResearchpeer-review

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Details

Translated title of the contributionGrowth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy
Original languageGerman
Publication statusPublished - 2010
EventDPG 2010 - Regensburg, Germany
Duration: 21 Mar 201026 Mar 2010

Conference

ConferenceDPG 2010
Country/TerritoryGermany
CityRegensburg
Period21/03/1026/03/10