Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy
Research output: Contribution to conference › Poster › Research › peer-review
Standard
Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy. / Kratzer, Markus; Shen, Quan; Teichert, Christian.
2010. Poster session presented at DPG 2010, Regensburg, Germany.
2010. Poster session presented at DPG 2010, Regensburg, Germany.
Research output: Contribution to conference › Poster › Research › peer-review
Harvard
Kratzer, M, Shen, Q & Teichert, C 2010, 'Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy', DPG 2010, Regensburg, Germany, 21/03/10 - 26/03/10.
APA
Kratzer, M., Shen, Q., & Teichert, C. (2010). Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy. Poster session presented at DPG 2010, Regensburg, Germany.
Vancouver
Kratzer M, Shen Q, Teichert C. Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy. 2010. Poster session presented at DPG 2010, Regensburg, Germany.
Author
Bibtex - Download
@conference{0e25cac05f4e4cfaa9a20b28190b324c,
title = "Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy",
author = "Markus Kratzer and Quan Shen and Christian Teichert",
year = "2010",
language = "Deutsch",
note = "DPG Fr{\"u}hjahrstagung der Sektion Kondensierte Materie (SKM) ; Conference date: 21-03-2010 Through 26-03-2010",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - Growth of para-hexaphenyl (p6P) on SiO2 by hot wall epitaxy
AU - Kratzer, Markus
AU - Shen, Quan
AU - Teichert, Christian
PY - 2010
Y1 - 2010
M3 - Poster
T2 - DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM)
Y2 - 21 March 2010 through 26 March 2010
ER -
