Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy

Research output: Contribution to conferencePosterResearchpeer-review

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Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy. / Kratzer, Markus; Shen, Quan; Teichert, Christian.
2010. Poster session presented at In situ characterization of near-surface processes, Eisenerz, Austria.

Research output: Contribution to conferencePosterResearchpeer-review

Harvard

Kratzer, M, Shen, Q & Teichert, C 2010, 'Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy', In situ characterization of near-surface processes, Eisenerz, Austria, 30/05/10 - 3/06/10.

APA

Kratzer, M., Shen, Q., & Teichert, C. (2010). Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy. Poster session presented at In situ characterization of near-surface processes, Eisenerz, Austria.

Vancouver

Kratzer M, Shen Q, Teichert C. Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy. 2010. Poster session presented at In situ characterization of near-surface processes, Eisenerz, Austria.

Author

Kratzer, Markus ; Shen, Quan ; Teichert, Christian. / Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy. Poster session presented at In situ characterization of near-surface processes, Eisenerz, Austria.

Bibtex - Download

@conference{225605a1a59c406595c0f6e496931a05,
title = "Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy",
author = "Markus Kratzer and Quan Shen and Christian Teichert",
year = "2010",
language = "English",
note = "In situ characterization of near-surface processes ; Conference date: 30-05-2010 Through 03-06-2010",

}

RIS (suitable for import to EndNote) - Download

TY - CONF

T1 - Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy

AU - Kratzer, Markus

AU - Shen, Quan

AU - Teichert, Christian

PY - 2010

Y1 - 2010

M3 - Poster

T2 - In situ characterization of near-surface processes

Y2 - 30 May 2010 through 3 June 2010

ER -