Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy
Research output: Contribution to conference › Poster › Research › peer-review
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| Translated title of the contribution | Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy |
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| Original language | English |
| Publication status | Published - 2010 |
| Event | In situ characterization of near-surface processes - Eisenerz, Austria Duration: 30 May 2010 → 3 Jun 2010 |
Conference
| Conference | In situ characterization of near-surface processes |
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| Country/Territory | Austria |
| City | Eisenerz |
| Period | 30/05/10 → 3/06/10 |
