Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Standard
Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy. / Kratzer, Markus; Shen, Quan; Teichert, Christian.
2010. Postersitzung präsentiert bei In situ characterization of near-surface processes, Eisenerz, Österreich.
2010. Postersitzung präsentiert bei In situ characterization of near-surface processes, Eisenerz, Österreich.
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Harvard
Kratzer, M, Shen, Q & Teichert, C 2010, 'Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy', In situ characterization of near-surface processes, Eisenerz, Österreich, 30/05/10 - 3/06/10.
APA
Kratzer, M., Shen, Q., & Teichert, C. (2010). Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy. Postersitzung präsentiert bei In situ characterization of near-surface processes, Eisenerz, Österreich.
Vancouver
Kratzer M, Shen Q, Teichert C. Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy. 2010. Postersitzung präsentiert bei In situ characterization of near-surface processes, Eisenerz, Österreich.
Author
Bibtex - Download
@conference{225605a1a59c406595c0f6e496931a05,
title = "Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy",
author = "Markus Kratzer and Quan Shen and Christian Teichert",
year = "2010",
language = "English",
note = "In situ characterization of near-surface processes ; Conference date: 30-05-2010 Through 03-06-2010",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy
AU - Kratzer, Markus
AU - Shen, Quan
AU - Teichert, Christian
PY - 2010
Y1 - 2010
M3 - Poster
T2 - In situ characterization of near-surface processes
Y2 - 30 May 2010 through 3 June 2010
ER -
