C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Standard
C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices. / Nevosad, Andreas.
Oxide-based Materials and Devices IV. 2013. p. 862618-1- 862618-8.
Oxide-based Materials and Devices IV. 2013. p. 862618-1- 862618-8.
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Harvard
Nevosad, A 2013, C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices. in Oxide-based Materials and Devices IV. pp. 862618-1- 862618-8. https://doi.org/10.1117/12.2013532
APA
Nevosad, A. (2013). C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices. In Oxide-based Materials and Devices IV (pp. 862618-1- 862618-8) https://doi.org/10.1117/12.2013532
Vancouver
Nevosad A. C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices. In Oxide-based Materials and Devices IV. 2013. p. 862618-1- 862618-8 doi: 10.1117/12.2013532
Author
Bibtex - Download
@inproceedings{d6ee674d053b4235a477145a3d571af3,
title = "C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices",
author = "Andreas Nevosad",
year = "2013",
doi = "10.1117/12.2013532",
language = "English",
pages = "862618--1-- 862618--8",
booktitle = "Oxide-based Materials and Devices IV",
}
RIS (suitable for import to EndNote) - Download
TY - GEN
T1 - C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices
AU - Nevosad, Andreas
PY - 2013
Y1 - 2013
U2 - 10.1117/12.2013532
DO - 10.1117/12.2013532
M3 - Conference contribution
SP - 862618-1- 862618-8
BT - Oxide-based Materials and Devices IV
ER -
