C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices

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C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices. / Nevosad, Andreas.
Oxide-based Materials and Devices IV. 2013. S. 862618-1- 862618-8.

Publikationen: Beitrag in Buch/Bericht/KonferenzbandBeitrag in Konferenzband

Vancouver

Nevosad A. C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices. in Oxide-based Materials and Devices IV. 2013. S. 862618-1- 862618-8 doi: 10.1117/12.2013532

Bibtex - Download

@inproceedings{d6ee674d053b4235a477145a3d571af3,
title = "C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices",
author = "Andreas Nevosad",
year = "2013",
doi = "10.1117/12.2013532",
language = "English",
pages = "862618--1-- 862618--8",
booktitle = "Oxide-based Materials and Devices IV",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices

AU - Nevosad, Andreas

PY - 2013

Y1 - 2013

U2 - 10.1117/12.2013532

DO - 10.1117/12.2013532

M3 - Conference contribution

SP - 862618-1- 862618-8

BT - Oxide-based Materials and Devices IV

ER -