C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices
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| Translated title of the contribution | C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices |
|---|---|
| Original language | English |
| Title of host publication | Oxide-based Materials and Devices IV |
| Pages | 862618-1- 862618-8 |
| DOIs | |
| Publication status | Published - 2013 |
