C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Standard
C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices. / Nevosad, Andreas; Hofstätter, Michael; Wiessner, Manfred et al.
Proc. of SPIE, Oxide-based Materials and Devices IV. 2013. p. 1-10.
Proc. of SPIE, Oxide-based Materials and Devices IV. 2013. p. 1-10.
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
Harvard
Nevosad, A, Hofstätter, M, Wiessner, M, Supancic, P & Teichert, C 2013, C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices. in Proc. of SPIE, Oxide-based Materials and Devices IV. pp. 1-10. https://doi.org/10.1117/12.2013532
APA
Nevosad, A., Hofstätter, M., Wiessner, M., Supancic, P., & Teichert, C. (2013). C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices. In Proc. of SPIE, Oxide-based Materials and Devices IV (pp. 1-10) https://doi.org/10.1117/12.2013532
Vancouver
Nevosad A, Hofstätter M, Wiessner M, Supancic P, Teichert C. C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices. In Proc. of SPIE, Oxide-based Materials and Devices IV. 2013. p. 1-10 doi: http://dx.doi.org/10.1117/12.2013532
Author
Bibtex - Download
@inproceedings{79caeb5e4f4b4e1d98b73c058f6b4712,
title = "C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices",
author = "Andreas Nevosad and Michael Hofst{\"a}tter and Manfred Wiessner and Peter Supancic and Christian Teichert",
year = "2013",
doi = "http://dx.doi.org/10.1117/12.2013532",
language = "English",
pages = "1--10",
booktitle = "Proc. of SPIE, Oxide-based Materials and Devices IV",
}
RIS (suitable for import to EndNote) - Download
TY - GEN
T1 - C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices
AU - Nevosad, Andreas
AU - Hofstätter, Michael
AU - Wiessner, Manfred
AU - Supancic, Peter
AU - Teichert, Christian
PY - 2013
Y1 - 2013
U2 - http://dx.doi.org/10.1117/12.2013532
DO - http://dx.doi.org/10.1117/12.2013532
M3 - Conference contribution
SP - 1
EP - 10
BT - Proc. of SPIE, Oxide-based Materials and Devices IV
ER -
