C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices

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C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices. / Nevosad, Andreas; Hofstätter, Michael; Wiessner, Manfred et al.
Proc. of SPIE, Oxide-based Materials and Devices IV. 2013. S. 1-10.

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Nevosad A, Hofstätter M, Wiessner M, Supancic P, Teichert C. C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices. in Proc. of SPIE, Oxide-based Materials and Devices IV. 2013. S. 1-10 doi: http://dx.doi.org/10.1117/12.2013532

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@inproceedings{79caeb5e4f4b4e1d98b73c058f6b4712,
title = "C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices",
author = "Andreas Nevosad and Michael Hofst{\"a}tter and Manfred Wiessner and Peter Supancic and Christian Teichert",
year = "2013",
doi = "http://dx.doi.org/10.1117/12.2013532",
language = "English",
pages = "1--10",
booktitle = "Proc. of SPIE, Oxide-based Materials and Devices IV",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices

AU - Nevosad, Andreas

AU - Hofstätter, Michael

AU - Wiessner, Manfred

AU - Supancic, Peter

AU - Teichert, Christian

PY - 2013

Y1 - 2013

U2 - http://dx.doi.org/10.1117/12.2013532

DO - http://dx.doi.org/10.1117/12.2013532

M3 - Conference contribution

SP - 1

EP - 10

BT - Proc. of SPIE, Oxide-based Materials and Devices IV

ER -