C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices
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Proc. of SPIE, Oxide-based Materials and Devices IV. 2013. S. 1-10.
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TY - GEN
T1 - C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices
AU - Nevosad, Andreas
AU - Hofstätter, Michael
AU - Wiessner, Manfred
AU - Supancic, Peter
AU - Teichert, Christian
PY - 2013
Y1 - 2013
U2 - http://dx.doi.org/10.1117/12.2013532
DO - http://dx.doi.org/10.1117/12.2013532
M3 - Conference contribution
SP - 1
EP - 10
BT - Proc. of SPIE, Oxide-based Materials and Devices IV
ER -