C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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| Translated title of the contribution | C-AFM and KPFM approach to inverstigate the electrical properties of single grain boundaries in ZnO varistor devices |
|---|---|
| Original language | English |
| Title of host publication | Proc. of SPIE, Oxide-based Materials and Devices IV |
| Pages | 1-10 |
| DOIs | |
| Publication status | Published - 2013 |
