Aluminum oxide for an effective Schottky gate in Si / SiGe two
Research output: Contribution to conference › Poster › Research › peer-review
Standard
Aluminum oxide for an effective Schottky gate in Si / SiGe two. / Brunner, Roland.
2010. Poster session presented at 30th International Conference on the Physics of Semiconductors (ICPS 2010), Seoul, Korea, Republic of.
2010. Poster session presented at 30th International Conference on the Physics of Semiconductors (ICPS 2010), Seoul, Korea, Republic of.
Research output: Contribution to conference › Poster › Research › peer-review
Harvard
Brunner, R 2010, 'Aluminum oxide for an effective Schottky gate in Si / SiGe two', 30th International Conference on the Physics of Semiconductors (ICPS 2010), Seoul, Korea, Republic of, 25/07/10 - 30/07/10. <http://www.icps2010.org/sub03.php>
APA
Brunner, R. (2010). Aluminum oxide for an effective Schottky gate in Si / SiGe two. Poster session presented at 30th International Conference on the Physics of Semiconductors (ICPS 2010), Seoul, Korea, Republic of. http://www.icps2010.org/sub03.php
Vancouver
Brunner R. Aluminum oxide for an effective Schottky gate in Si / SiGe two. 2010. Poster session presented at 30th International Conference on the Physics of Semiconductors (ICPS 2010), Seoul, Korea, Republic of.
Author
Bibtex - Download
@conference{6dffa287ac6d424c865a69c56d4cbf3b,
title = "Aluminum oxide for an effective Schottky gate in Si / SiGe two",
author = "Roland Brunner",
year = "2010",
language = "English",
note = "30th International Conference on the Physics of Semiconductors (ICPS 2010) ; Conference date: 25-07-2010 Through 30-07-2010",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - Aluminum oxide for an effective Schottky gate in Si / SiGe two
AU - Brunner, Roland
PY - 2010
Y1 - 2010
M3 - Poster
T2 - 30th International Conference on the Physics of Semiconductors (ICPS 2010)
Y2 - 25 July 2010 through 30 July 2010
ER -
