Aluminum oxide for an effective Schottky gate in Si / SiGe two
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Standard
Aluminum oxide for an effective Schottky gate in Si / SiGe two. / Brunner, Roland.
2010. Postersitzung präsentiert bei 30th International Conference on the Physics of Semiconductors, Seoul, Südkorea.
2010. Postersitzung präsentiert bei 30th International Conference on the Physics of Semiconductors, Seoul, Südkorea.
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Harvard
Brunner, R 2010, 'Aluminum oxide for an effective Schottky gate in Si / SiGe two', 30th International Conference on the Physics of Semiconductors, Seoul, Südkorea, 25/07/10 - 30/07/10. <http://www.icps2010.org/sub03.php>
APA
Brunner, R. (2010). Aluminum oxide for an effective Schottky gate in Si / SiGe two. Postersitzung präsentiert bei 30th International Conference on the Physics of Semiconductors, Seoul, Südkorea. http://www.icps2010.org/sub03.php
Vancouver
Brunner R. Aluminum oxide for an effective Schottky gate in Si / SiGe two. 2010. Postersitzung präsentiert bei 30th International Conference on the Physics of Semiconductors, Seoul, Südkorea.
Author
Bibtex - Download
@conference{6dffa287ac6d424c865a69c56d4cbf3b,
title = "Aluminum oxide for an effective Schottky gate in Si / SiGe two",
author = "Roland Brunner",
year = "2010",
language = "English",
note = "30th International Conference on the Physics of Semiconductors (ICPS 2010) ; Conference date: 25-07-2010 Through 30-07-2010",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - Aluminum oxide for an effective Schottky gate in Si / SiGe two
AU - Brunner, Roland
PY - 2010
Y1 - 2010
M3 - Poster
T2 - 30th International Conference on the Physics of Semiconductors (ICPS 2010)
Y2 - 25 July 2010 through 30 July 2010
ER -
