Aluminum oxide for an effective Schottky gate in Si / SiGe two
Research output: Contribution to conference › Poster › Research › peer-review
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| Translated title of the contribution | Aluminum oxide for an effective Schottky gate in Si / SiGe two |
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| Original language | English |
| Publication status | Published - 2010 |
| Event | 30th International Conference on the Physics of Semiconductors (ICPS 2010) - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010 |
Conference
| Conference | 30th International Conference on the Physics of Semiconductors (ICPS 2010) |
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| Abbreviated title | ICPS 2010 |
| Country/Territory | Korea, Republic of |
| City | Seoul |
| Period | 25/07/10 → 30/07/10 |
