Aluminum oxide for an effective Schottky gate in Si / SiGe two

Research output: Contribution to conferencePosterResearchpeer-review

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Details

Translated title of the contributionAluminum oxide for an effective Schottky gate in Si / SiGe two
Original languageEnglish
Publication statusPublished - 2010
Event30th International Conference on the Physics of Semiconductors (ICPS 2010) - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Conference

Conference30th International Conference on the Physics of Semiconductors (ICPS 2010)
Abbreviated titleICPS 2010
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10