Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
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In: Semiconductor science and technology, Vol. 26.2011, No. 5, 05504, 11.03.2011.
Research output: Contribution to journal › Article › Research › peer-review
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TY - JOUR
T1 - Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
AU - Shin, Y.S.
AU - Brunner, Roland
AU - et.al., [No Value]
PY - 2011/3/11
Y1 - 2011/3/11
N2 - We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.
AB - We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.
U2 - 10.1088/0268-1242/26/5/055004
DO - 10.1088/0268-1242/26/5/055004
M3 - Article
VL - 26.2011
JO - Semiconductor science and technology
JF - Semiconductor science and technology
SN - 0268-1242
IS - 5
M1 - 05504
ER -
