Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Standard
Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems. / Shin, Y.S.; Brunner, Roland; et.al., [No Value].
in: Semiconductor science and technology, Jahrgang 26, 2011, S. 05504-05507.
in: Semiconductor science and technology, Jahrgang 26, 2011, S. 05504-05507.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Harvard
Shin, YS, Brunner, R & et.al., NV 2011, 'Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems', Semiconductor science and technology, Jg. 26, S. 05504-05507.
APA
Shin, Y. S., Brunner, R., & et.al., N. V. (2011). Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems. Semiconductor science and technology, 26, 05504-05507.
Vancouver
Shin YS, Brunner R, et.al. NV. Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems. Semiconductor science and technology. 2011;26:05504-05507.
Author
Bibtex - Download
@article{53291959832e427aabf839ef9cd4648e,
title = "Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems",
author = "Y.S. Shin and Roland Brunner and et.al., {[No Value]}",
year = "2011",
language = "English",
volume = "26",
pages = "05504--05507",
journal = "Semiconductor science and technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
AU - Shin, Y.S.
AU - Brunner, Roland
AU - et.al., [No Value]
PY - 2011
Y1 - 2011
M3 - Article
VL - 26
SP - 5504
EP - 5507
JO - Semiconductor science and technology
JF - Semiconductor science and technology
SN - 0268-1242
ER -
