Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems
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Translated title of the contribution | Aluminium oxide for an effective gate in Si/SiGe two-dimensional electron gas systems |
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Original language | English |
Pages (from-to) | 05504-05507 |
Journal | Semiconductor science and technology |
Volume | 26 |
Publication status | Published - 2011 |