Journal of applied physics, 0021-8979
Journal
ISSNs | 0021-8979 |
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51 - 57 out of 57Page size: 10
Research output
- 2004
- Published
How do nanoislands induced by ion sputtering evolve during the early stage of growth?
Teichert, C., 2004, In: Journal of applied physics. 96, p. 2244-2248Research output: Contribution to journal › Article › Research › peer-review
- 1999
- Published
Time Dependent Interface Stability During Rapid Solidification
Ludwig, A. & Sahm, P., 1999, In: Journal of applied physics. p. 3682-3687Research output: Contribution to journal › Article › Research › peer-review
- Published
Transport, optical and electronic properties of the half metal CrO2
Mazin, I. I., Singh, D. J. & Draxl, C., 1999, In: Journal of applied physics. 85, p. 6220-6220Research output: Contribution to journal › Article › Research › peer-review
- 1997
- Published
A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy
Pleschinger, A., Lutz, J. & Kuchar, F., 1997, In: Journal of applied physics. 81, p. 6749-6754Research output: Contribution to journal › Article › Research › peer-review
- 1996
- Published
Grain boundary diffusion through thin films. Application to permeable surfaces
Preis, W. & Sitte, W., 1996, In: Journal of applied physics. 79, p. 2986-2994Research output: Contribution to journal › Article › Research › peer-review
- 1988
- Published
CONTROL OF CARRIER LIFETIMES IN PBTE DOPING SUPERLATTICES
Bauer, G., Oswald, J., Goltsos, W. & Nurmikko, AV., 1988, In: Journal of applied physics. 63, p. 2179-2181Research output: Contribution to journal › Article › Research › peer-review
- 1987
- Published
EXPERIMENTAL IDENTIFICATION OF THE ENERGY-LEVEL OF SUBSTITUTIONAL MANGANESE IN SILICON
Haider, M., Sitter, H., Czaputa, R., Feichtinger, H. & Oswald, J., 1987, In: Journal of applied physics. 62, p. 3785-3790Research output: Contribution to journal › Article › Research › peer-review