Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures
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Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. / Lysenko, V. S.; Gomeniuk, Yu V.; Kozyrev, Yu. N. et al.
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . 2011. S. 179-186 (Advanced materials research; Band 276).
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . 2011. S. 179-186 (Advanced materials research; Band 276).
Publikationen: Beitrag in Buch/Bericht/Konferenzband › Beitrag in Konferenzband
Harvard
Lysenko, VS, Gomeniuk, YV, Kozyrev, YN, Rubezhanska, MY, Sklyar, VK, Kondratenko, SV, Melnichuk, YY & Teichert, C 2011, Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. in Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . Advanced materials research, Bd. 276, S. 179-186. https://doi.org/10.4028/www.scientific.net/AMR.276.179
APA
Lysenko, V. S., Gomeniuk, Y. V., Kozyrev, Y. N., Rubezhanska, M. Y., Sklyar, V. K., Kondratenko, S. V., Melnichuk, Y. Y., & Teichert, C. (2011). Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. In Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine (S. 179-186). (Advanced materials research; Band 276). https://doi.org/10.4028/www.scientific.net/AMR.276.179
Vancouver
Lysenko VS, Gomeniuk YV, Kozyrev YN, Rubezhanska MY, Sklyar VK, Kondratenko SV et al. Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures. in Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . 2011. S. 179-186. (Advanced materials research). doi: 10.4028/www.scientific.net/AMR.276.179
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Bibtex - Download
@inproceedings{d3e91939d136431c92ce580d04ecc25f,
title = "Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures",
author = "Lysenko, {V. S.} and Gomeniuk, {Yu V.} and Kozyrev, {Yu. N.} and Rubezhanska, {M. Yu.} and V.K. Sklyar and S.V. Kondratenko and Ye.Ye. Melnichuk and Christian Teichert",
year = "2011",
doi = "10.4028/www.scientific.net/AMR.276.179",
language = "English",
isbn = "978-3-03785-178-4",
series = "Advanced materials research",
pages = "179--186",
booktitle = "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices",
}
RIS (suitable for import to EndNote) - Download
TY - GEN
T1 - Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures
AU - Lysenko, V. S.
AU - Gomeniuk, Yu V.
AU - Kozyrev, Yu. N.
AU - Rubezhanska, M. Yu.
AU - Sklyar, V.K.
AU - Kondratenko, S.V.
AU - Melnichuk, Ye.Ye.
AU - Teichert, Christian
PY - 2011
Y1 - 2011
U2 - 10.4028/www.scientific.net/AMR.276.179
DO - 10.4028/www.scientific.net/AMR.276.179
M3 - Conference contribution
SN - 978-3-03785-178-4
T3 - Advanced materials research
SP - 179
EP - 186
BT - Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
ER -
