Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24 - 28 October, 2010 Kyiv, Ukraine . 2011. p. 179-186 (Advanced materials research; Vol. 276).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Effect of Ge nanoislandson lateral photoconductivity of Ge-SiOx-Si structures
AU - Lysenko, V. S.
AU - Gomeniuk, Yu V.
AU - Kozyrev, Yu. N.
AU - Rubezhanska, M. Yu.
AU - Sklyar, V.K.
AU - Kondratenko, S.V.
AU - Melnichuk, Ye.Ye.
AU - Teichert, Christian
PY - 2011
Y1 - 2011
U2 - 10.4028/www.scientific.net/AMR.276.179
DO - 10.4028/www.scientific.net/AMR.276.179
M3 - Conference contribution
SN - 978-3-03785-178-4
T3 - Advanced materials research
SP - 179
EP - 186
BT - Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
ER -