Characterization of silicon gate oxides by conducting atomic-force microscopy

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

Standard

Characterization of silicon gate oxides by conducting atomic-force microscopy. / Kremmer, S; Teichert, Christian; Pischler, E et al.
in: Surface and interface analysis, Jahrgang 33, 2002, S. 168-172 .

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

Vancouver

Kremmer S, Teichert C, Pischler E, Gold H, Kuchar F, Schatzmayr M. Characterization of silicon gate oxides by conducting atomic-force microscopy. Surface and interface analysis. 2002;33:168-172 . doi: 10.1002/sia.1183

Bibtex - Download

@article{7ab935d582424b9294ad20998f48c68f,
title = "Characterization of silicon gate oxides by conducting atomic-force microscopy",
author = "S Kremmer and Christian Teichert and E Pischler and H Gold and Friedemar Kuchar and M Schatzmayr",
year = "2002",
doi = "10.1002/sia.1183",
language = "English",
volume = "33",
pages = "168--172 ",
journal = "Surface and interface analysis",
issn = "0142-2421",
publisher = "John Wiley & Sons, Gro{\ss}britannien",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Characterization of silicon gate oxides by conducting atomic-force microscopy

AU - Kremmer, S

AU - Teichert, Christian

AU - Pischler, E

AU - Gold, H

AU - Kuchar, Friedemar

AU - Schatzmayr, M

PY - 2002

Y1 - 2002

U2 - 10.1002/sia.1183

DO - 10.1002/sia.1183

M3 - Article

VL - 33

SP - 168

EP - 172

JO - Surface and interface analysis

JF - Surface and interface analysis

SN - 0142-2421

ER -