Buckle induced delamination techniques to measure the adhesion of metal dielectric interfaces
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Standard
Buckle induced delamination techniques to measure the adhesion of metal dielectric interfaces. / Kleinbichler, Andreas; Zechner, J.; Cordill, Megan.
in: Microelectronic engineering, Jahrgang 167.2017, Nr. 5 January, 02.11.2016, S. 63-68.
in: Microelectronic engineering, Jahrgang 167.2017, Nr. 5 January, 02.11.2016, S. 63-68.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Harvard
Kleinbichler, A, Zechner, J & Cordill, M 2016, 'Buckle induced delamination techniques to measure the adhesion of metal dielectric interfaces', Microelectronic engineering, Jg. 167.2017, Nr. 5 January, S. 63-68.
APA
Kleinbichler, A., Zechner, J., & Cordill, M. (2016). Buckle induced delamination techniques to measure the adhesion of metal dielectric interfaces. Microelectronic engineering, 167.2017(5 January), 63-68. Vorzeitige Online-Publikation.
Vancouver
Kleinbichler A, Zechner J, Cordill M. Buckle induced delamination techniques to measure the adhesion of metal dielectric interfaces. Microelectronic engineering. 2016 Nov 2;167.2017(5 January):63-68. Epub 2016 Nov 2.
Author
Bibtex - Download
@article{c50d23c1fc99469086876211a14e65e6,
title = "Buckle induced delamination techniques to measure the adhesion of metal dielectric interfaces",
author = "Andreas Kleinbichler and J. Zechner and Megan Cordill",
year = "2016",
month = nov,
day = "2",
language = "English",
volume = "167.2017",
pages = "63--68",
journal = "Microelectronic engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "5 January",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Buckle induced delamination techniques to measure the adhesion of metal dielectric interfaces
AU - Kleinbichler, Andreas
AU - Zechner, J.
AU - Cordill, Megan
PY - 2016/11/2
Y1 - 2016/11/2
M3 - Article
VL - 167.2017
SP - 63
EP - 68
JO - Microelectronic engineering
JF - Microelectronic engineering
SN - 0167-9317
IS - 5 January
ER -
