Analysis of macrosegregation formation and columnar-to-equiaxed transition during solidification of Al-4 wt.%Cu ingot using a 5-phase model

Ahmadein, M., Wu, M. & Ludwig, A., 1 Mai 2015, in: Journal of crystal growth. 417, S. 65-74 10 S., 22363.

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Anisotropic intrinsic and extrinsic stresses in epitaxial wurzitic GaN thin film on γ-LiAlO2 (100)

Eiper, E., Hofmann, A., Gerlach, J. W., Rauschenbach, B. & Keckes, J., 2005, in: Journal of crystal growth. 284, S. 561-566

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Para-sexiphenyl thin films on KCl(1 0 0) surfaces: Growth morphologies and their individual epitaxial order

Haber, T., Andreev, A., Thierry, A., Sitter, H., Oehzelt, M. & Resel, R., 2005, in: Journal of crystal growth. 284, S. 209-220

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Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature

Hassan, M., Springholz, G., Lechner, R. T., Groiss, H., Kirchschlager, R. & Bauer, G., 2011, in: Journal of crystal growth. 323, S. 363-367

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Temperature dependence of in-plane stresses in sublayers of Al/AlN/Al2O3(0 0 0 1) structure

Keckes, J., Six, S., Gerlach, J. W. & Rauschenbach, B., 2004, in: Journal of crystal growth. 262, S. 119-123

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Morphological Stability of a Planar Interface Subject to Rapid Quenching

Ludwig, A. & Sahm, P., 1998, in: Journal of crystal growth. S. 291-296

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Hypo-peritectic TRIS–NPG in a stationary temperature gradient: Thermodynamics, grain boundary migration and phase identification

Ludwig, A., Mogeritsch, J. P. & Witusiewicz, V. T., 15 Feb. 2023, in: Journal of crystal growth. 604.2023, 15 February, 9 S., 127052.

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Explanation for the linear solid/liquid interface recoil observed during directional solidification of a TRIS-NPG alloy under microgravity conditions

Ludwig, A., Mogeritsch, J. P., Barati, H., Wu, M. & Kharicha, A., 23 Juli 2024, in: Journal of crystal growth. 644.2024, 15 October, 8 S., 127824.

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Compact seaweed growth of peritectic phase on confined, flat properitectic dendrites

Mogeritsch, J. & Ludwig, A., 2016, in: Journal of crystal growth.

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Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

Montaigne Ramil, A., Singh, T. B., Haber, N. T., Marjanovic, N. S., Grünes, S., Andreev, A., Matt, G. J., Resel, R., Sitter, H. & Sariciftci, S., 2006, in: Journal of crystal growth. 288, S. 123-127

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