The femtosecond laser micro-processing of the field-emission tip arrays in single crystal CeB6
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In: Vacuum, Vol. 184 , 109929, 02.2021.
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TY - JOUR
T1 - The femtosecond laser micro-processing of the field-emission tip arrays in single crystal CeB6
AU - Zhou, Ning
AU - Zhang, Wei
AU - Zhang, Xin
AU - Liu, Hongliang
AU - Liu, Qingmei
AU - Xiao, Yixin
AU - Liu, Yanqin
AU - Jin, Shengli
AU - Liao, Ning
N1 - Publisher Copyright: © 2020 Elsevier Ltd
PY - 2021/2
Y1 - 2021/2
N2 - The field-emission tip arrays (FEAs) in single crystal cerium-hexaboride (CeB 6) were micro-processed by femtosecond laser. The results show that the femtosecond laser has no damage to the surface structure and phase of the CeB 6 FEAs, and the FEA with the curvature radius of the optimal tips of about 0.6 μm and the height of about 5 μm have uniform morphology and the best field-emission performance. The single crystal CeB 6 FEAs had good emission stability under the following conditions: the starting electric field of 2.8 V/μm and an emission current density of 0.98 A/cm 2 at an electric field of 7.7 V/μm. The calculations of material removal threshold and finite element simulation of the temperature field substantiate that laser peak energy density F 0=0.95 J/cm 2 is in good agreement with the theoretical calculation result (0.51 J/cm 2≤F 0 ≤ 2.12 J/cm 2). Finally, the best process parameter range of this experiment is obtained. These results further indicating that the femtosecond laser micro-processing is an effective method to develop the vacuum field-emission application of single crystal CeB 6.
AB - The field-emission tip arrays (FEAs) in single crystal cerium-hexaboride (CeB 6) were micro-processed by femtosecond laser. The results show that the femtosecond laser has no damage to the surface structure and phase of the CeB 6 FEAs, and the FEA with the curvature radius of the optimal tips of about 0.6 μm and the height of about 5 μm have uniform morphology and the best field-emission performance. The single crystal CeB 6 FEAs had good emission stability under the following conditions: the starting electric field of 2.8 V/μm and an emission current density of 0.98 A/cm 2 at an electric field of 7.7 V/μm. The calculations of material removal threshold and finite element simulation of the temperature field substantiate that laser peak energy density F 0=0.95 J/cm 2 is in good agreement with the theoretical calculation result (0.51 J/cm 2≤F 0 ≤ 2.12 J/cm 2). Finally, the best process parameter range of this experiment is obtained. These results further indicating that the femtosecond laser micro-processing is an effective method to develop the vacuum field-emission application of single crystal CeB 6.
KW - Cerium-hexaboride (CeB )
KW - Femtosecond laser
KW - Field-emission tip arrays (FEAs)
KW - Finite element simulation
KW - Removal threshold
UR - http://www.scopus.com/inward/record.url?scp=85097439014&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2020.109929
DO - 10.1016/j.vacuum.2020.109929
M3 - Article
VL - 184
JO - Vacuum
JF - Vacuum
SN - 0042-207X
M1 - 109929
ER -
