The femtosecond laser micro-processing of the field-emission tip arrays in single crystal CeB6
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Authors
Organisational units
External Organisational units
- Beijing University of Technology
- Beijing Research Institute of Aviation Engineering
- The State Key Laboratory of Refractories and Metallurgy
- Anyang Institute of Technology
Abstract
The field-emission tip arrays (FEAs) in single crystal cerium-hexaboride (CeB 6) were micro-processed by femtosecond laser. The results show that the femtosecond laser has no damage to the surface structure and phase of the CeB 6 FEAs, and the FEA with the curvature radius of the optimal tips of about 0.6 μm and the height of about 5 μm have uniform morphology and the best field-emission performance. The single crystal CeB 6 FEAs had good emission stability under the following conditions: the starting electric field of 2.8 V/μm and an emission current density of 0.98 A/cm 2 at an electric field of 7.7 V/μm. The calculations of material removal threshold and finite element simulation of the temperature field substantiate that laser peak energy density F 0=0.95 J/cm 2 is in good agreement with the theoretical calculation result (0.51 J/cm 2≤F 0 ≤ 2.12 J/cm 2). Finally, the best process parameter range of this experiment is obtained. These results further indicating that the femtosecond laser micro-processing is an effective method to develop the vacuum field-emission application of single crystal CeB 6.
Details
Original language | English |
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Article number | 109929 |
Number of pages | 8 |
Journal | Vacuum |
Volume | 184 |
DOIs | |
Publication status | Published - Feb 2021 |