TY - JOUR

T1 - Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

AU - Murastov, Gennadiy

AU - Aslam, Muhammad Awais

AU - Leitner, Simon

AU - Tkachuk, Vadym

AU - Plutnarová, Iva

AU - Pavlica, Egon

AU - Rodriguez, Raul D.

AU - Sofer, Zdenek

AU - Matkovic, Aleksandar

N1 - Publisher Copyright: © 2024 by the authors.

PY - 2024/3/6

Y1 - 2024/3/6

N2 - Tungsten diselenide ((Formula presented.)) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to (Formula presented.) remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to (Formula presented.) for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal–oxide–semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional (Formula presented.) field-effect transistors with multi-layer palladium diselenide ((Formula presented.)) as a contact material. We demonstrate that (Formula presented.) contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type (Formula presented.) devices with (Formula presented.) van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the (Formula presented.) under the contacts, enabling pinning of the threshold voltage to the valence band of (Formula presented.), yielding pure p-type operation of the devices.

AB - Tungsten diselenide ((Formula presented.)) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to (Formula presented.) remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to (Formula presented.) for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal–oxide–semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional (Formula presented.) field-effect transistors with multi-layer palladium diselenide ((Formula presented.)) as a contact material. We demonstrate that (Formula presented.) contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type (Formula presented.) devices with (Formula presented.) van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the (Formula presented.) under the contacts, enabling pinning of the threshold voltage to the valence band of (Formula presented.), yielding pure p-type operation of the devices.

KW - palladium diselenide

KW - tungsten diselenide

KW - tungsten selenium oxide

KW - semi-metal

KW - laser treatment

KW - contact engineering

KW - field-effect transistor

KW - pMOS

KW - van der Waals electronics

KW - 2D Materials

KW - 2D materials

UR - https://doi.org/10.3390/nano14050481

U2 - 10.3390/nano14050481

DO - 10.3390/nano14050481

M3 - Article

VL - 14.2024

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 5

M1 - 481

ER -