Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors
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in: Nanomaterials, 06.03.2024.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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T1 - Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors
AU - Murastov, Gennadiy
AU - Aslam, Muhammad Awais
AU - Leitner, Simon
AU - Tkachuk, Vadym
AU - Plutnarová, Iva
AU - Pavlica, Egon
AU - Rodriguez, Raul D.
AU - Sofer, Zdenek
AU - Matković, Aleksandar
PY - 2024/3/6
Y1 - 2024/3/6
N2 - Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor materialfor field-effect transistors (FETs) due to its unique electronic properties, including a sizeable bandgap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to WSe2remains an issue, and high contact barriers prevent the utilization of the full performance in electronicapplications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron orhole injection and consequently pin the threshold voltage to either conduction or valence band. Thiswould be the way to achieve complementary metal–oxide–semiconductor devices without dopingof the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effecttransistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate thatPdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material.This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts.Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yieldingpure p-type operation of the devices.
AB - Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor materialfor field-effect transistors (FETs) due to its unique electronic properties, including a sizeable bandgap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to WSe2remains an issue, and high contact barriers prevent the utilization of the full performance in electronicapplications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron orhole injection and consequently pin the threshold voltage to either conduction or valence band. Thiswould be the way to achieve complementary metal–oxide–semiconductor devices without dopingof the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effecttransistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate thatPdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material.This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts.Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yieldingpure p-type operation of the devices.
KW - palladium diselenide
KW - tungsten diselenide
KW - tungsten selenium oxide
KW - semi-metal
KW - laser treatment
KW - contact engineering
KW - field-effect transistor
KW - pMOS
KW - van der Waals electronics
KW - 2D Materials
UR - https://doi.org/10.3390/nano14050481
U2 - 10.3390/nano14050481
DO - 10.3390/nano14050481
M3 - Article
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
ER -