Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x

Research output: Contribution to conferencePosterResearchpeer-review

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Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x. / Teichert, Christian.
2009. Poster session presented at DPG Dresden, Dresden, Germany.

Research output: Contribution to conferencePosterResearchpeer-review

Harvard

Teichert, C 2009, 'Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x', DPG Dresden, Dresden, Germany, 23/03/09 - 27/03/09.

APA

Teichert, C. (2009). Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x. Poster session presented at DPG Dresden, Dresden, Germany.

Vancouver

Teichert C. Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x. 2009. Poster session presented at DPG Dresden, Dresden, Germany.

Author

Bibtex - Download

@conference{1e69acf89730472cb8d968f51bbed809,
title = "Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x",
author = "Christian Teichert",
year = "2009",
language = "English",
note = "DPG Dresden ; Conference date: 23-03-2009 Through 27-03-2009",

}

RIS (suitable for import to EndNote) - Download

TY - CONF

T1 - Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x

AU - Teichert, Christian

PY - 2009

Y1 - 2009

M3 - Poster

T2 - DPG Dresden

Y2 - 23 March 2009 through 27 March 2009

ER -