Investigation of Si and Ge nanocluster systems on the surface SiOx/Si prepared by molecular beam epitaxy

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Investigation of Si and Ge nanocluster systems on the surface SiOx/Si prepared by molecular beam epitaxy. / Kozyrev, Yu.N.; Rubezhanska, M.Yu.; Sklyar, V. K. et al.
In: Dopovidi Nacional'noï Akademiï Nauk Ukraïny , 2010, p. 71-76.

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@article{dd8545eb87c840e4ba8cc10069d7ac15,
title = "Investigation of Si and Ge nanocluster systems on the surface SiOx/Si prepared by molecular beam epitaxy",
author = "Yu.N. Kozyrev and M.Yu. Rubezhanska and Sklyar, {V. K.} and Kartel, {M. T.} and Dmitruk, {N. V.} and Christian Teichert and Christian Hofer",
year = "2010",
language = "English",
pages = "71--76",
journal = "Dopovidi Nacional'no{\"i} Akademi{\"i} Nauk Ukra{\"i}ny ",
issn = "1025-6415",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Investigation of Si and Ge nanocluster systems on the surface SiOx/Si prepared by molecular beam epitaxy

AU - Kozyrev, Yu.N.

AU - Rubezhanska, M.Yu.

AU - Sklyar, V. K.

AU - Kartel, M. T.

AU - Dmitruk, N. V.

AU - Teichert, Christian

AU - Hofer, Christian

PY - 2010

Y1 - 2010

M3 - Article

SP - 71

EP - 76

JO - Dopovidi Nacional'noï Akademiï Nauk Ukraïny

JF - Dopovidi Nacional'noï Akademiï Nauk Ukraïny

SN - 1025-6415

ER -