Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide
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In: Advanced engineering materials, Vol. 20, No. 6, 1701067, 01.06.2018.
Research output: Contribution to journal › Article › Research › peer-review
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TY - JOUR
T1 - Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide
AU - Kettner, Olivia
AU - Šimić, Sanja
AU - Kunert, Birgit
AU - Schennach, Robert
AU - Resel, Roland
AU - Grießer, Thomas
AU - Friedel, Bettina
PY - 2018/6/1
Y1 - 2018/6/1
KW - Self-passivation
KW - silicon carbide
KW - sol-gel processing
KW - surface termination
UR - http://www.scopus.com/inward/record.url?scp=85042465639&partnerID=8YFLogxK
U2 - 10.1002/adem.201701067
DO - 10.1002/adem.201701067
M3 - Article
AN - SCOPUS:85042465639
VL - 20
JO - Advanced engineering materials
JF - Advanced engineering materials
SN - 1438-1656
IS - 6
M1 - 1701067
ER -