Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide

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Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide. / Kettner, Olivia; Šimić, Sanja; Kunert, Birgit et al.
in: Advanced engineering materials, Jahrgang 20, Nr. 6, 1701067, 01.06.2018.

Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)

Harvard

Kettner, O, Šimić, S, Kunert, B, Schennach, R, Resel, R, Grießer, T & Friedel, B 2018, 'Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide', Advanced engineering materials, Jg. 20, Nr. 6, 1701067. https://doi.org/10.1002/adem.201701067

APA

Kettner, O., Šimić, S., Kunert, B., Schennach, R., Resel, R., Grießer, T., & Friedel, B. (2018). Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide. Advanced engineering materials, 20(6), Artikel 1701067. https://doi.org/10.1002/adem.201701067

Vancouver

Kettner O, Šimić S, Kunert B, Schennach R, Resel R, Grießer T et al. Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide. Advanced engineering materials. 2018 Jun 1;20(6):1701067. doi: 10.1002/adem.201701067

Author

Kettner, Olivia ; Šimić, Sanja ; Kunert, Birgit et al. / Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide. in: Advanced engineering materials. 2018 ; Jahrgang 20, Nr. 6.

Bibtex - Download

@article{bc8e3eab7f904132b179483c330ae1c1,
title = "Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide",
keywords = "Self-passivation, silicon carbide, sol-gel processing, surface termination",
author = "Olivia Kettner and Sanja {\v S}imi{\'c} and Birgit Kunert and Robert Schennach and Roland Resel and Thomas Grie{\ss}er and Bettina Friedel",
year = "2018",
month = jun,
day = "1",
doi = "10.1002/adem.201701067",
language = "English",
volume = "20",
journal = " Advanced engineering materials",
issn = "1438-1656",
publisher = "Wiley-VCH ",
number = "6",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Characterization of Surface and Structure of In Situ Doped Sol-Gel-Derived Silicon Carbide

AU - Kettner, Olivia

AU - Šimić, Sanja

AU - Kunert, Birgit

AU - Schennach, Robert

AU - Resel, Roland

AU - Grießer, Thomas

AU - Friedel, Bettina

PY - 2018/6/1

Y1 - 2018/6/1

KW - Self-passivation

KW - silicon carbide

KW - sol-gel processing

KW - surface termination

UR - http://www.scopus.com/inward/record.url?scp=85042465639&partnerID=8YFLogxK

U2 - 10.1002/adem.201701067

DO - 10.1002/adem.201701067

M3 - Article

AN - SCOPUS:85042465639

VL - 20

JO - Advanced engineering materials

JF - Advanced engineering materials

SN - 1438-1656

IS - 6

M1 - 1701067

ER -

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