Characterization of silicon gate oxides by conducting atomic-force microscopy

Research output: Contribution to journalArticleResearchpeer-review

Authors

  • S Kremmer
  • E Pischler
  • H Gold
  • M Schatzmayr

Organisational units

Details

Translated title of the contributionCharacterization of silicon gate oxides by conducting atomic-force microscopy
Original languageEnglish
Pages (from-to)168-172
JournalSurface and interface analysis
Volume33
DOIs
Publication statusPublished - 2002