All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

Research output: Contribution to journal › Article › Research › peer-review

Standard

All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes. / Aslam, Muhammad Awais; Leitner, Simon; Tyagi, Shubham et al.
In: Nano Letters, Vol. 24.2024, No. 22, 24.05.2024, p. 6529-6537.

Research output: Contribution to journal › Article › Research › peer-review

Harvard

Aslam, MA, Leitner, S, Tyagi, S, Provias, A, Tkachuk, V, Pavlica, E, Dienstleder, M, Knez, D, Watanabe, K, Taniguchi, T, Yan, D, Shi, Y, Knobloch, T, Waltl, M, Schwingenschlögl, U, Grasser, T & Matković, A 2024, 'All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes', Nano Letters, vol. 24.2024, no. 22, pp. 6529-6537. https://doi.org/10.1021/acs.nanolett.4c00956

APA

Aslam, M. A., Leitner, S., Tyagi, S., Provias, A., Tkachuk, V., Pavlica, E., Dienstleder, M., Knez, D., Watanabe, K., Taniguchi, T., Yan, D., Shi, Y., Knobloch, T., Waltl, M., Schwingenschlögl, U., Grasser, T., & Matković, A. (2024). All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes. Nano Letters, 24.2024(22), 6529-6537. https://doi.org/10.1021/acs.nanolett.4c00956

Vancouver

Aslam MA, Leitner S, Tyagi S, Provias A, Tkachuk V, Pavlica E et al. All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes. Nano Letters. 2024 May 24;24.2024(22):6529-6537. doi: 10.1021/acs.nanolett.4c00956

Author

Aslam, Muhammad Awais ; Leitner, Simon ; Tyagi, Shubham et al. / All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes. In: Nano Letters. 2024 ; Vol. 24.2024, No. 22. pp. 6529-6537.

Bibtex - Download

@article{b2e023ca5fc74a1989a3e9b76d18e5e5,
title = "All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes",
abstract = "Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.",
keywords = "contact resistance, graphene, graphite electrodes, Platinum diselenide, transistors",
author = "Aslam, {Muhammad Awais} and Simon Leitner and Shubham Tyagi and Alexandros Provias and Vadym Tkachuk and Egon Pavlica and Martina Dienstleder and Daniel Knez and Kenji Watanabe and Takashi Taniguchi and Dayu Yan and Youguo Shi and Theresia Knobloch and Michael Waltl and Udo Schwingenschl{\"o}gl and Tibor Grasser and Aleksandar Matkovi{\'c}",
note = "Publisher Copyright: {\textcopyright} 2024 The Authors. Published by American Chemical Society",
year = "2024",
month = may,
day = "24",
doi = "10.1021/acs.nanolett.4c00956",
language = "English",
volume = "24.2024",
pages = "6529--6537",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "22",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

AU - Aslam, Muhammad Awais

AU - Leitner, Simon

AU - Tyagi, Shubham

AU - Provias, Alexandros

AU - Tkachuk, Vadym

AU - Pavlica, Egon

AU - Dienstleder, Martina

AU - Knez, Daniel

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Yan, Dayu

AU - Shi, Youguo

AU - Knobloch, Theresia

AU - Waltl, Michael

AU - Schwingenschlögl, Udo

AU - Grasser, Tibor

AU - Matković, Aleksandar

N1 - Publisher Copyright: © 2024 The Authors. Published by American Chemical Society

PY - 2024/5/24

Y1 - 2024/5/24

N2 - Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

AB - Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

KW - contact resistance

KW - graphene

KW - graphite electrodes

KW - Platinum diselenide

KW - transistors

UR - http://www.scopus.com/inward/record.url?scp=85194232919&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.4c00956

DO - 10.1021/acs.nanolett.4c00956

M3 - Article

AN - SCOPUS:85194232919

VL - 24.2024

SP - 6529

EP - 6537

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 22

ER -

View graph of relations

SFX

Publication SFX

By the same authors

View more