TY - JOUR

T1 - All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes

AU - Aslam, Muhammad Awais

AU - Leitner, Simon

AU - Tyagi, Shubham

AU - Provias, Alexandros

AU - Tkachuk, Vadym

AU - Pavlica, Egon

AU - Dienstleder, Martina

AU - Knez, Daniel

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Yan, Dayu

AU - Shi, Youguo

AU - Knobloch, Theresia

AU - Waltl, Michael

AU - Schwingenschlögl, Udo

AU - Grasser, Tibor

AU - Matković, Aleksandar

N1 - Publisher Copyright: © 2024 The Authors. Published by American Chemical Society

PY - 2024/5/24

Y1 - 2024/5/24

N2 - Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

AB - Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high ION/IOFF ratios up to 109 with currents above 100 μA μm-1 and mobilities of 50 cm2 V-1 s-1 at room temperature and over 400 cm2 V-1 s-1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm-1. The contact resistance at the graphite-PtSe2 interface is found to be below 700 Ω μm. Our results present PtSe2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.

KW - contact resistance

KW - graphene

KW - graphite electrodes

KW - Platinum diselenide

KW - transistors

UR - http://www.scopus.com/inward/record.url?scp=85194232919&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.4c00956

DO - 10.1021/acs.nanolett.4c00956

M3 - Article

AN - SCOPUS:85194232919

VL - 24.2024

SP - 6529

EP - 6537

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 22

ER -