AFM based morphological and electrical characterization of hot wall epitaxy grown 6P/SiO2
Research output: Contribution to conference › Poster › Research › peer-review
Standard
AFM based morphological and electrical characterization of hot wall epitaxy grown 6P/SiO2. / Kratzer, Markus; Klima, Stefan; Beinik, Igor et al.
2010. Poster session presented at ÖPG 2010, Salzburg, Austria.
2010. Poster session presented at ÖPG 2010, Salzburg, Austria.
Research output: Contribution to conference › Poster › Research › peer-review
Harvard
Kratzer, M, Klima, S, Beinik, I, Shen, Q, Lugstein, A & Teichert, C 2010, 'AFM based morphological and electrical characterization of hot wall epitaxy grown 6P/SiO2', ÖPG 2010, Salzburg, Austria, 6/09/10 - 10/09/10.
APA
Kratzer, M., Klima, S., Beinik, I., Shen, Q., Lugstein, A., & Teichert, C. (2010). AFM based morphological and electrical characterization of hot wall epitaxy grown 6P/SiO2. Poster session presented at ÖPG 2010, Salzburg, Austria.
Vancouver
Kratzer M, Klima S, Beinik I, Shen Q, Lugstein A, Teichert C. AFM based morphological and electrical characterization of hot wall epitaxy grown 6P/SiO2. 2010. Poster session presented at ÖPG 2010, Salzburg, Austria.
Author
Bibtex - Download
@conference{3e7f742c99c941789a3067b5cfc6b25f,
title = "AFM based morphological and electrical characterization of hot wall epitaxy grown 6P/SiO2",
author = "Markus Kratzer and Stefan Klima and Igor Beinik and Quan Shen and Alois Lugstein and Christian Teichert",
year = "2010",
language = "Deutsch",
note = "60. Jahrestagung der {\"O}sterreichischen Physikalischen Gesellschaft, {\"O}PG 2010 ; Conference date: 06-09-2010 Through 10-09-2010",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - AFM based morphological and electrical characterization of hot wall epitaxy grown 6P/SiO2
AU - Kratzer, Markus
AU - Klima, Stefan
AU - Beinik, Igor
AU - Shen, Quan
AU - Lugstein, Alois
AU - Teichert, Christian
PY - 2010
Y1 - 2010
M3 - Poster
T2 - 60. Jahrestagung der Österreichischen Physikalischen Gesellschaft
Y2 - 6 September 2010 through 10 September 2010
ER -
