Chair of Physics (460)
Organisational unit: Chair
Research output
- Published
Quantum Percolation in the Quantum Hall Regime
Sohrmann, C., Oswald, J. & Römer, R., 2009, Quantum and Semi-Classical Percolation and Breakdown in Disordered Solids. p. 163-193Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research
- Published
Topographical and structural investigations of phosphorous-doped silicon films
Sorschag, K., Gold, H., Lutz, J., Kuchar, F., Pippan, M. & Noll, H., 1998, In: Applied physics / A (Series A, Materials science & processing). 66, p. 999-1002Research output: Contribution to journal › Article › Research › peer-review
- Published
Design and modelling of PbTe wide quantum wells based on the n-i-p-i- concept
Span, G., Ganitzer, P., Heigl, G., Homer, A. & Oswald, J., 1996.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Defect induced shortening of excess carrier lifetime in single period nipi structures
Span, G., Oswald, J. & Heigl, G., 1998, In: Materials science and technology. 14, p. 1307-1313Research output: Contribution to journal › Article › Research › peer-review
- Published
Herstellung und Design von PbTe Wide Quantum Wells
Span, G., Oswald, J. & Ganitzer, P., 1995.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Design and modelling of PbTe wide quantum wells based on the n-i-p-i concept
Span, G., Ganitzer, P., Heigl, G., Homer, A. & Oswald, J., 1998, In: Superlattices and microstructures. 23, p. 239-242Research output: Contribution to journal › Article › Research › peer-review
- Published
Beeinflussung des zeitabhängigen Photosignals in PbTe-Strukturen durch externe selektive Steuerkontakte
Span, G., Pippan, M. & Oswald, J., 1993.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Einfluß von Versetzungen auf die elektronischen Eigenschaften von PbTe nipi-Strukturen
Span, G., Oswald, J. & Heigl, G., 1994.Research output: Contribution to conference › Poster › Research › peer-review
- Published
HfO2 as gate dielectrics for Ge-based devices
Spiga, S., Wiemer, C., Scarel, G., Tallarida, G., Seguini, G., Perego, M., Ferrari, S., Fanciulli, M., Mavrou, G., Dimoulas, A., Kremmer, S., Teichert, C. & Pavia, G., 2007Research output: Book/Report › Commissioned report › Transfer › peer-review
- Published
Alkyl chain assisted thin film growth of 2,7-dioctyloxy-benzothienobenzothiophene
Spreitzer, H., Kaufmann, B., Ruzié, C., Röthel, C., Arnold, T., Geerts, Y. H., Teichert, C., Resel, R. & Jones, A. O. F., 21 Jul 2019, In: Journal of Materials Chemistry C. 7.2019, 27, p. 8477-8484 8 p.Research output: Contribution to journal › Article › Research › peer-review
