High resolution residual stress gradient characterization in W/TiN-stack on Si(100): Correlating in-plane stress and grain size distributions in W sublayer

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High resolution residual stress gradient characterization in W/TiN-stack on Si(100): Correlating in-plane stress and grain size distributions in W sublayer. / Hammer, René; Todt, Juraj; Keckes, Jozef et al.
in: Materials and Design, Jahrgang 132.2017, Nr. 15 October, 15.10.2017, S. 72-78.

Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)

Harvard

Hammer, R, Todt, J, Keckes, J, Sartory, B, Parteder, G, Kraft, J & Defregger, S 2017, 'High resolution residual stress gradient characterization in W/TiN-stack on Si(100): Correlating in-plane stress and grain size distributions in W sublayer', Materials and Design, Jg. 132.2017, Nr. 15 October, S. 72-78. https://doi.org/10.1016/j.matdes.2017.06.052

APA

Hammer, R., Todt, J., Keckes, J., Sartory, B., Parteder, G., Kraft, J., & Defregger, S. (2017). High resolution residual stress gradient characterization in W/TiN-stack on Si(100): Correlating in-plane stress and grain size distributions in W sublayer. Materials and Design, 132.2017(15 October), 72-78. https://doi.org/10.1016/j.matdes.2017.06.052

Vancouver

Hammer R, Todt J, Keckes J, Sartory B, Parteder G, Kraft J et al. High resolution residual stress gradient characterization in W/TiN-stack on Si(100): Correlating in-plane stress and grain size distributions in W sublayer. Materials and Design. 2017 Okt 15;132.2017(15 October):72-78. Epub 2017 Jun 23. doi: 10.1016/j.matdes.2017.06.052

Author

Hammer, René ; Todt, Juraj ; Keckes, Jozef et al. / High resolution residual stress gradient characterization in W/TiN-stack on Si(100) : Correlating in-plane stress and grain size distributions in W sublayer. in: Materials and Design. 2017 ; Jahrgang 132.2017, Nr. 15 October. S. 72-78.

Bibtex - Download

@article{a32fe5fe2b494c26b1924bba1f8aa144,
title = "High resolution residual stress gradient characterization in W/TiN-stack on Si(100): Correlating in-plane stress and grain size distributions in W sublayer",
keywords = "Grain size distribution, Hall-Petch, Ion beam layer removal, Nanocrystalline, Residual stress profile, Tungsten thin film",
author = "Ren{\'e} Hammer and Juraj Todt and Jozef Keckes and Bernhard Sartory and Georg Parteder and Jochen Kraft and Stefan Defregger",
year = "2017",
month = oct,
day = "15",
doi = "10.1016/j.matdes.2017.06.052",
language = "English",
volume = "132.2017",
pages = "72--78",
journal = "Materials and Design",
issn = "0264-1275",
publisher = "Elsevier",
number = "15 October",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - High resolution residual stress gradient characterization in W/TiN-stack on Si(100)

T2 - Correlating in-plane stress and grain size distributions in W sublayer

AU - Hammer, René

AU - Todt, Juraj

AU - Keckes, Jozef

AU - Sartory, Bernhard

AU - Parteder, Georg

AU - Kraft, Jochen

AU - Defregger, Stefan

PY - 2017/10/15

Y1 - 2017/10/15

KW - Grain size distribution

KW - Hall-Petch

KW - Ion beam layer removal

KW - Nanocrystalline

KW - Residual stress profile

KW - Tungsten thin film

UR - http://www.scopus.com/inward/record.url?scp=85021677351&partnerID=8YFLogxK

U2 - 10.1016/j.matdes.2017.06.052

DO - 10.1016/j.matdes.2017.06.052

M3 - Article

AN - SCOPUS:85021677351

VL - 132.2017

SP - 72

EP - 78

JO - Materials and Design

JF - Materials and Design

SN - 0264-1275

IS - 15 October

ER -

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