Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation
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in: Thin solid films, Jahrgang 809.2025, Nr. 1 January, 140597, 27.12.2024.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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TY - JOUR
T1 - Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation
AU - Schaffar, Gerald J.K.
AU - Tscharnuter, Daniel
AU - Imrich, Peter Julian
AU - Maier-Kiener, Verena
N1 - Publisher Copyright: © 2024 The Author(s)
PY - 2024/12/27
Y1 - 2024/12/27
N2 - This work aims to apply modern spherical indentation methods to micromechanical testing at exceptionally high temperatures. Tests were performed on a polycrystalline silicon thin film. This film was deposited on a (100) monocrystalline silicon substrate with an intermediate Oxide layer, mimicking the structure of a silicon-gate technology field effect transistor. The indentation tests were conducted at 500 °C and 700 °C. The obtained flow curves are discussed regarding the microscopically observed deformation behavior and compared to literature data concerning the high-temperature plasticity of silicon. The results suggest kink-pair controlled, thermally activated glide of dislocations as the dominating plastic deformation mechanism for both investigated temperatures.
AB - This work aims to apply modern spherical indentation methods to micromechanical testing at exceptionally high temperatures. Tests were performed on a polycrystalline silicon thin film. This film was deposited on a (100) monocrystalline silicon substrate with an intermediate Oxide layer, mimicking the structure of a silicon-gate technology field effect transistor. The indentation tests were conducted at 500 °C and 700 °C. The obtained flow curves are discussed regarding the microscopically observed deformation behavior and compared to literature data concerning the high-temperature plasticity of silicon. The results suggest kink-pair controlled, thermally activated glide of dislocations as the dominating plastic deformation mechanism for both investigated temperatures.
KW - High-temperature
KW - Plasticity
KW - Silicon
KW - Spherical nanoindentation
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=85213501582&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2024.140597
DO - 10.1016/j.tsf.2024.140597
M3 - Article
VL - 809.2025
JO - Thin solid films
JF - Thin solid films
SN - 0040-6090
IS - 1 January
M1 - 140597
ER -
